High-resolution electron-beam-induced-current study of the defect structure in GaN epilayers

Journal of Physics Condensed Matter

Volumn 14, Issue 48, 2002, Pages 13285-13290

  Shmidt, N M ^a   Soltanovich, O A ^b   Usikov, A S ^a   Yakimov, E B ^b   Zavarin, E E ^a  

^a IOFFE INSTITUTE   (Russian Federation)

^b INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTAL STRUCTURE; DENSITY (SPECIFIC GRAVITY); DIFFUSION IN SOLIDS; ELECTRON BEAMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE;

DEFECT STRUCTURE; EPILAYERS; HIGH RESOLUTION ELECTRON BEAM INDUCED CURRENT;

GALLIUM NITRIDE;

EID: 0037122122     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/14/48/379     Document Type: Article

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