The Molecule-Electrode Interface in Single-Molecule Transistors

Angewandte Chemie - International Edition

Volumn 42, Issue 46, 2003, Pages 5706-5711

  Yu, Hongbin ^a   Luo, Yi ^a   Beverly, Kristen ^a   Stoddart, J Fraser ^b   Tseng, Hsian Rong ^b   Heath, James R ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Break junctions; Differential conductance; Molecular devices; Molecule electrode contact; Rotaxanes

Indexed keywords

ELECTRIC CONDUCTANCE; ELECTRODES; PLATINUM;

ELECTRON TRANSPORT;

TRANSISTORS;

PLATINUM; ROTAXANE;

ARTICLE; COLOR; CONDUCTANCE; DEVICE; ELECTRODE; ELECTRON TRANSPORT; MEASUREMENT; MOLECULAR INTERACTION; MOLECULE;

EID: 0347504886     PISSN: 14337851     EISSN: None     Source Type: Journal    
DOI: 10.1002/anie.200352352     Document Type: Article

References (32)

1. A. Aviram, M. A. Ratner, Chem. Phys. Lett. 1974, 29, 277-283.
2. J. R. Heath, M. A. Ratner, Phys. Today 2003, 56, 43-49.
3. J. Jortner, M. Bixon, A. A. Voityuk, N. Rösch, J. Phys. Chem. A 2002, 106, 7599-7606.
4. a) S. N. Yaliraki, M. Kemp, M. A. Ratner, J. Am. Chem. Soc. 1999, 121, 3428-3434;
5. b) K. W. Hipps, Science 2001, 294, 536-537;
6. c) X. D. Cui, A. Primak, X. Zarate, J. Tomfohr, O. F. Sankey, A. L. Moore, T. A. Moore, D. Gust, G. Harris, S. M. Lindsay, Science 2001, 294, 571-574.
7. a) D. Goldhaber-Gordon, M. S. Montemerlo, J. C. Love, G. J. Opiteck, Proc. IEEE. 1997, 85, 521-540;
8. b) C. Joachim, J. K. Gimzewski, A. Aviram, Nature 2000, 408, 541-548;
9. c) R. L. Carroll, C. B. Gorman, Angew. Chem. 2002, 114, 4556-4579; Angew. Chem. Int. Ed. 2002, 41, 4378-4400;
10. c) R. L. Carroll, C. B. Gorman, Angew. Chem. 2002, 114, 4556-4579; Angew. Chem. Int. Ed. 2002, 41, 4378-4400;
11. d) M. Mayor, H. B. Weber, R. Waser in Nanoelectronics and Information Technology. Advanced Electronic Materials and Novel Devices (Ed.: R. Waser), Wiley-VCH, Weinheim, 2003, pp. 501-525.
12. M. A. Reed, C. Zhou, C. T. Muller, T. P. Burgin, J. M. Tour, Science 1997, 278, 252-254.
13. H. Park, J. Park, A. K. L. Lim, E. H. Anderson, A. P. Alivisatos, P. L. McEuen, Nature 2000, 407, 57-60.
14. J. Park, A. N. Pasupathy, J. I. Goldsmith, C. Chang, Y. Yaish, J. R. Petta, M. Rinkoski, J. P. Sethna, H. D. Abruña, P. L. McEuen, D. C. Ralph, Nature 2002, 417, 722-725.
15. W. Liang, M. P. Shores, M. Bockrath, J. R. Long, H. Park, Nature 2002, 417, 725-729.
16. J. F. Stoddart, H.-R. Tseng, Proc. Natl. Acad. Sci. USA 2002, 99, 4797-4800.
17. a) J. O. Jeppesen, J. Perkins, J. Becher, J. F. Stoddart, Org. Lett. 2000, 2, 3547-3550;
18. b) H.-R Tseng, S. A. Vignon, J. F. Stoddart, Angew. Chem. 2003, 115, 1529-1533; Angew. Chem. Int. Ed. 2003, 42, 1491-1495;
19. b) H.-R Tseng, S. A. Vignon, J. F. Stoddart, Angew. Chem. 2003, 115, 1529-1533; Angew. Chem. Int. Ed. 2003, 42, 1491-1495;
20. c) J. O. Jeppesen, K. A. Nielsen, J. Perkins, S. A. Vignon, A. Di Fabio, R. Ballardini, M. T. Gandolfi, M. Venturi, V. Balzani, J. Becher, J. F. Stoddart, Chem. Eur. J. 2003, 9, 2982-3007.
21. V. Balzani, A. Credi, G. Mattersteig, O. A. Matthews, F. M. Raymo, J. F. Stoddart, M. Venturi, A. J. P. White, D. J. Williams, J. Org. Chem. 2000, 65, 1924-1936.
22. C. P. Collier, G. Mattersteig, E. W. Wong, Y. Luo, K. Beverly, J. Sampaio, F. M. Raymo, J. F. Stoddart, J. R. Heath, Science 2000, 289, 1172-1175.
23. Y. Luo, C. P. Collier, J. O. Jeppesen, K. A. Nielsen, E. DeIonno, G. Ho, J. Perkins, H.-R. Tseng, T. Yamamoto, J. F. Stoddart, J. R. Heath, ChemPhysChem 2002, 3, 519-525.
24. M. Diehl, D. W. Steuerman, H.-R. Tseng, S. A. Vignon, A. Star, P. C. Celestre, J. F. Stoddart, J. R. Heath, ChemPhysChem 2003, 4, in press.
25. Other researchers have described bistability in junctions sandwiching a molecular monolayer between a metal bottom electrode and a Ti/Al top electrode. This bistability, however, is not dependent upon the details of the molecular material, and exhibits a very different electrical signature of the switching. For example, it is not thermally activated; see a) Y. Chen, D. A. A. Ohlberg, X. Li, D. R. Stewart, R. S. Williams, J. O. Jeppesen, K. A. Nielsen, J. F. Stoddart, D. L. Olynick, E. Anderson, Appl. Phys. Lett. 2003, 82, 1610-1612;
26. b) Y. Chen, G.-Y. Jung, D. A. A. Ohlberg, X. Li, D. R. Stewart, J. O. Jeppesen, K. A. Nielsen, J. F. Stoddart, R. S. Williams, Nanotechnology 2003, 14, 462-468.
27. -2 A for gate voltages up to 35 V.
28. We note that the gate coupling to the molecules is strong in our devices. From the slope of the differential conductance plot, we can estimate that a change of about 300 mV in the gate-voltage translates into a change of about 100 mV in the source-drain bias. This coupling strength is significantly greater than any previously reported, and allows us to access a larger range of the molecular electronic energy levels by varying the gate bias. This increased coupling strength is probably attributable to the use of Pt break junctions, which allows for the fabrication of much thinner electrodes.
29. H. Grabert, M. H. Devoret, Single Charge Tunneling, Plenum, New York, 1992.
30. D. Chattopadhyay, I. Galeska, F. Papadimitrakopoulos, J. Am. Chem. Soc. 2003, 125, 3370-3375.
31. R. Krupke, F. Hennrich, H. v. Löhneysen, M. M. Kappes, Science, 2003, 301, 344-347.
32. N. Melosh, A. Boukai, F. Diana, B. Geradot, A. Badolato, P. Petroff, J. R. Heath, Science 2003, 300, 112-114.