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Volumn 42, Issue 46, 2003, Pages 5706-5711

The Molecule-Electrode Interface in Single-Molecule Transistors

Author keywords

Break junctions; Differential conductance; Molecular devices; Molecule electrode contact; Rotaxanes

Indexed keywords

ELECTRIC CONDUCTANCE; ELECTRODES; PLATINUM;

EID: 0347504886     PISSN: 14337851     EISSN: None     Source Type: Journal    
DOI: 10.1002/anie.200352352     Document Type: Article
Times cited : (144)

References (32)
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    • b) K. W. Hipps, Science 2001, 294, 536-537;
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    • c) R. L. Carroll, C. B. Gorman, Angew. Chem. 2002, 114, 4556-4579; Angew. Chem. Int. Ed. 2002, 41, 4378-4400;
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    • Carroll, R.L.1    Gorman, C.B.2
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    • c) R. L. Carroll, C. B. Gorman, Angew. Chem. 2002, 114, 4556-4579; Angew. Chem. Int. Ed. 2002, 41, 4378-4400;
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    • b) H.-R Tseng, S. A. Vignon, J. F. Stoddart, Angew. Chem. 2003, 115, 1529-1533; Angew. Chem. Int. Ed. 2003, 42, 1491-1495;
    • (2003) Angew. Chem. Int. Ed. , vol.42 , pp. 1491-1495
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    • Other researchers have described bistability in junctions sandwiching a molecular monolayer between a metal bottom electrode and a Ti/Al top electrode. This bistability, however, is not dependent upon the details of the molecular material, and exhibits a very different electrical signature of the switching. For example, it is not thermally activated; see a) Y. Chen, D. A. A. Ohlberg, X. Li, D. R. Stewart, R. S. Williams, J. O. Jeppesen, K. A. Nielsen, J. F. Stoddart, D. L. Olynick, E. Anderson, Appl. Phys. Lett. 2003, 82, 1610-1612;
    • (2003) Appl. Phys. Lett. , vol.82 , pp. 1610-1612
    • Chen, Y.1    Ohlberg, D.A.A.2    Li, X.3    Stewart, D.R.4    Williams, R.S.5    Jeppesen, J.O.6    Nielsen, K.A.7    Stoddart, J.F.8    Olynick, D.L.9    Anderson, E.10
  • 27
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    • note
    • -2 A for gate voltages up to 35 V.
  • 28
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    • note
    • We note that the gate coupling to the molecules is strong in our devices. From the slope of the differential conductance plot, we can estimate that a change of about 300 mV in the gate-voltage translates into a change of about 100 mV in the source-drain bias. This coupling strength is significantly greater than any previously reported, and allows us to access a larger range of the molecular electronic energy levels by varying the gate bias. This increased coupling strength is probably attributable to the use of Pt break junctions, which allows for the fabrication of much thinner electrodes.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.