Giant enhancement of polariton relaxation in semiconductor microcavities by polariton-free carrier interaction: Experimental evidence and theory

Physical Review B - Condensed Matter and Materials Physics

Volumn 67, Issue 16, 2003, Pages 1653021-1653025

  Tartakovskii, A I ^a,b   Krizhanovskii, D N ^a   Malpuech, G ^c   Emam Ismail, M ^b   Chernenko, A V ^a   Kavokin, A V ^d   Kulakovskii, V D ^a   Skolnick, M S ^b   Roberts, J S ^b  

^a INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

^c UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^d UNIVERSITÉ CLERMONT AUVERGNE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ARTICLE; CALCULATION; ELECTRON; ELEMENTARY PARTICLE; HEATING; HIGH TEMPERATURE; LASER; MATHEMATICAL ANALYSIS; PHOTON; POLARITON; QUANTUM MECHANICS; SEMICONDUCTOR; SIMULATION; SPACE;

EID: 0142051529     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (28)

1. C. Weisbuch, M. Nishioka, A. Ishikawa, and Y. Arakawa, Phys. Rev. Lett. 69, 3314 (1992).
2. A. Imamoglu, R.J. Ram, S. Pau, and Y. Yamamoto, Phys. Rev. A 53, 4250 (1996).
3. For recent reviews see A.I. Tartakovskii, M.S. Skolnick, D.N. K.rizhanovskii, V.D. Kulakovskii, R.M. Stevenson, R. Butté, J.J. Baumberg, D.M. Whittaker, and John S. Roberts, Adv. Mater. 13, 1725 (2001); M.S. Skolnick, R.M. Stevenson, A.I. Tartakovskii, R. Butté, M. Emam-Ismail, D.M. Whittaker, P.G. Savvidis, J.J. Baumberg, A. Lemaitre, V.N. Astratov, and J.S. Roberts, Mater. Sci. Eng., C19, 407 (2002); M.S. Skolnick, A.I. Tartakovskii, R. Butté, D.M. Whittaker, and R.M. Stevenson, IEEE J. Sel. Top. Quantum Electron. 8, 1060 (2002).
4. For recent reviews see A.I. Tartakovskii, M.S. Skolnick, D.N. K.rizhanovskii, V.D. Kulakovskii, R.M. Stevenson, R. Butté, J.J. Baumberg, D.M. Whittaker, and John S. Roberts, Adv. Mater. 13, 1725 (2001); M.S. Skolnick, R.M. Stevenson, A.I. Tartakovskii, R. Butté, M. Emam-Ismail, D.M. Whittaker, P.G. Savvidis, J.J. Baumberg, A. Lemaitre, V.N. Astratov, and J.S. Roberts, Mater. Sci. Eng., C19, 407 (2002); M.S. Skolnick, A.I. Tartakovskii, R. Butté, D.M. Whittaker, and R.M. Stevenson, IEEE J. Sel. Top. Quantum Electron. 8, 1060 (2002).
5. For recent reviews see A.I. Tartakovskii, M.S. Skolnick, D.N. K.rizhanovskii, V.D. Kulakovskii, R.M. Stevenson, R. Butté, J.J. Baumberg, D.M. Whittaker, and John S. Roberts, Adv. Mater. 13, 1725 (2001); M.S. Skolnick, R.M. Stevenson, A.I. Tartakovskii, R. Butté, M. Emam-Ismail, D.M. Whittaker, P.G. Savvidis, J.J. Baumberg, A. Lemaitre, V.N. Astratov, and J.S. Roberts, Mater. Sci. Eng., C19, 407 (2002); M.S. Skolnick, A.I. Tartakovskii, R. Butté, D.M. Whittaker, and R.M. Stevenson, IEEE J. Sel. Top. Quantum Electron. 8, 1060 (2002).
6. G. Malpuech, A. Kavokin, A. Di Carlo, and J.J. Baumberg, Phys. Rev. B 65, 153310 (2002).
7. F. Tassone, C. Piermarocchi, V. Savona, A. Quattropani, and P. Schwendimann, Phys. Rev. B 56, 7554 (1997); F. Tassone and Y. Yamamoto, ibid. 59, 10 830 (1999).
8. F. Tassone, C. Piermarocchi, V. Savona, A. Quattropani, and P. Schwendimann, Phys. Rev. B 56, 7554 (1997); F. Tassone and Y. Yamamoto, ibid. 59, 10 830 (1999).
9. A.I. Tartakovskii, M. Emam-Ismail, R.M. Stevenson, M.S. Skolnick, V.N. Astratov, D.M. Whittaker, J.J. Baumberg, and J.S. Roberts, Phys. Rev. B 62, R2283 (2000).
10. R. Butté, G. Delalleau, A.I. Tartakovskii, M.S. Skolnick, V.N. Astratov, J.J. Baumberg, G. Malpuech, A. Di Carlo, A.V. Kavokin, and J.S. Roberts, Phys. Rev. B 65, 205310 (2002).
11. Le Si Dang, D. Heger, R. André, F. Boeuf, and R. Romestain, Phys. Rev. Lett. 81, 3920 (1998); F. Boeuf, R. André, R. Romestain, Le Si Dang, E. Péronne, J.F. Lampin, D. Hulin, and A. Alexandrou, Phys. Rev. B 62, R2279 (2000); A. Alexandrou, G. Bianchi, E. Péronne, B. Hallé, F. Boeuf, R. André, R. Romestain, and Le Si Dang, ibid. 64, 233318 (2001).
12. Le Si Dang, D. Heger, R. André, F. Boeuf, and R. Romestain, Phys. Rev. Lett. 81, 3920 (1998); F. Boeuf, R. André, R. Romestain, Le Si Dang, E. Péronne, J.F. Lampin, D. Hulin, and A. Alexandrou, Phys. Rev. B 62, R2279 (2000); A. Alexandrou, G. Bianchi, E. Péronne, B. Hallé, F. Boeuf, R. André, R. Romestain, and Le Si Dang, ibid. 64, 233318 (2001).
13. Le Si Dang, D. Heger, R. André, F. Boeuf, and R. Romestain, Phys. Rev. Lett. 81, 3920 (1998); F. Boeuf, R. André, R. Romestain, Le Si Dang, E. Péronne, J.F. Lampin, D. Hulin, and A. Alexandrou, Phys. Rev. B 62, R2279 (2000); A. Alexandrou, G. Bianchi, E. Péronne, B. Hallé, F. Boeuf, R. André, R. Romestain, and Le Si Dang, ibid. 64, 233318 (2001).
14. G. Ramon, R. Rapaport, A. Qarry, E. Cohen, A. Mann, Arza Ron, and L.N. Pfeiffer, Phys. Rev. B 65, 085323 (2002).
15. D.N. Krizhanovskii, A.I. Tartakovskii, A.V. Chemenko, V.D. Kulakovskii, M. Emam-Ismail, M.S. Skolnick, and J.S. Roberts, Solid State Commun. 118, 583 (2001).
16. Our microcavity sample contains 6 InGaAs QW's and has Rabi splitting, Ωof ≈, 6 meV. Further details on samples and experimental technique used can be found in Refs. 10,6.
17. L.C. Andreani, F. Tassone, and F. Bassani, Solid State Commun. 77, 641 (1991).
18. For a fuller discussion of the decay time constants see J. Bloch and J.Y. Marzin, Phys. Rev. B 56, 2103 (1997); B. Sermage, S. Long, I. Abram, J.Y. Marzin, J. Bloch, R. Planel, and V. ThierryMieg, ibid. 53, 16 516 (1996).
19. For a fuller discussion of the decay time constants see J. Bloch and J.Y. Marzin, Phys. Rev. B 56, 2103 (1997); B. Sermage, S. Long, I. Abram, J.Y. Marzin, J. Bloch, R. Planel, and V. ThierryMieg, ibid. 53, 16 516 (1996).
20. Our calculations show that the upper polariton branch has a negligible effect on polariton relaxation, except at zero detuning where the resonant scattering process 2 bottleneck polaritons → 1 upper polariton (k = 0) + 1 lower polariton (k = 0) contributes to relaxation resulting in an increase of a few percent in the small k lower polariton PL. For the detuning of -6 meV reported in the current work all such resonant relaxation processes result in negligible (< 1%) contribution to polariton relaxation, since in this case they involve high k upper polaritons with very low density of states.
21. -2 polaritons from Ti-sapphire.
22. -2. This range is in agreement with the results reported by other groups [see e.g. S.I. Gubarev, I.V. Kukushkin, S.V. Tovstonog, M.Yu. Akimov, J. Smet, K. von Klitzing, and W. Wegscheider, JETP Lett. 72, 324 (2000)].
23. -2. This range is in agreement with the results reported by other groups [see e.g. S.I. Gubarev, I.V. Kukushkin, S.V. Tovstonog, M.Yu. Akimov, J. Smet, K. von Klitzing, and W. Wegscheider, JETP Lett. 72, 324 (2000)].
24. -2. This range is in agreement with the results reported by other groups [see e.g. S.I. Gubarev, I.V. Kukushkin, S.V. Tovstonog, M.Yu. Akimov, J. Smet, K. von Klitzing, and W. Wegscheider, JETP Lett. 72, 324 (2000)].
25. -2. This range is in agreement with the results reported by other groups [see e.g. S.I. Gubarev, I.V. Kukushkin, S.V. Tovstonog, M.Yu. Akimov, J. Smet, K. von Klitzing, and W. Wegscheider, JETP Lett. 72, 324 (2000)].
26. P.G. Savvidis, J.J. Baumberg, D. Porras, D.M. Whittaker, M.S. Skolnick, and J.S. Roberts, Phys. Rev. B 65, 073309 (2002).
27. The most likely impurity in our sample is carbon.
28. The presence of impurities and free carriers in the QW's can be evidenced from measurements of the PL from the edge of the sample where the effect of the cavity on the QW and barrier emission is negligible [see e.g. M. Emam-Ismail, V.N. Astratov, M.S. Skolnick, D.M. Whittaker, and J.S. Roberts, Phys. Rev. B 62, 1552 (2000)]. However, the sign of the charge of the free carriers cannot be determined directly in such experiments.