1/f Noise modeling of InP HBT-based Schottky diodes for monolithic millimeter-wave mixers

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 1997, Pages 841-844

  Chung, Y H ^a   Sato, K F ^a   Chan, C W ^a   Lin, E W ^a   Grossman, P C ^a   Tran, L T ^a   Cowles, J ^a   Wang, H ^a   Oki, A K ^a   Najita, K ^a   De Lisio, M P ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; HETEROJUNCTION BIPOLAR TRANSISTORS; MIXER CIRCUITS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING INDIUM PHOSPHIDE; SIGNAL NOISE MEASUREMENT; SPURIOUS SIGNAL NOISE;

LOW FREQUENCY NOISE MEASUREMENT SYSTEM;

SCHOTTKY BARRIER DIODES;

EID: 0030655056     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)