High frequency performance of Sb-heterostructure millimeter-wave diodes

Conference Proceedings-International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2002, Pages 151-154

  Schulman, J N ^a   Thomas, S ^a   Chow, D H ^a   Croke, E T ^a   Dunlap, H L ^a   Holabird, K S ^a   Clark, W M ^a   Morgan, M A ^b   Weinreb, S ^b  

^a Hughes Aircraft Co   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; ENERGY GAP; HETEROJUNCTIONS; MILLIMETER WAVE DEVICES; NANOSTRUCTURED MATERIALS; QUANTUM THEORY; RADIOMETRY; SEMICONDUCTING ANTIMONY;

RESONANT INTERBAND TUNNELING DIODES (RITD);

SEMICONDUCTOR DIODES;

EID: 0036044759     PISSN: 10928669     EISSN: None     Source Type: Journal    
DOI: 10.1109/ICIPRM.2002.1014164     Document Type: Article

References (7)

1. Sb-heterostructure interband backward diodes
2. Fabrication of monolithically integrated InAlAs/InGaAs/InP HEMTs and InAs/AlSb/GaSb resonant interband tunneling diodes
3. Visualizing interfacial structure at non-common-atom heterojunctions with cross-sectional scanning tunneling microscopy
4. Microwave detection using GaAs/AlAs tunnel structures
5. Mechanisms of valley currents in InAs/AlSb/GaSb resonant interband tunneling diodes
6. Temperature dependence of Sb-hetewstructure millimeter-wave diodes