Temperature dependence of Sb-heterostructure millimetre-wave diodes

Electronics Letters

Volumn 38, Issue 2, 2002, Pages 94-95

  Schulman, J N ^a   Holabird, K S ^a   Chow, D H ^a   Dunlap, H L ^a   Thomas, S ^a   Croke, E T ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; FERMI LEVEL; HETEROJUNCTIONS; SEMICONDUCTING ANTIMONY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL EFFECTS;

ANTIMONY HETEROSTRUCTURE MILLIMETRE-WAVE DIODES; TEMPERATURE DEPENDENCE;

SEMICONDUCTOR DIODES;

EID: 0037122910     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20020070     Document Type: Article

References (4)

1. Sb-heterostructure interband backward diodes
2. New tunnel diode for zero-bias direct detection for millimeter-wave images
3. Microwave detection using GaAs/AlAs tunnel structures
4. Mechanisms of valley currents in InAs/AlSb/GaSb resonant interband tunneling diodes