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Physica E: Low-Dimensional Systems and Nanostructures

Volumn 20, Issue 3-4, 2004, Pages 251-254

Ballistic transport in InSb quantum wells at high temperature

(6) Goel, N a,b Chung, S J a Santos, M B a,b,c Suzuki, K b Miyashita, S b Hirayama, Y a,b,c

a University of Oklahoma (United States)

b Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories (Japan)

c JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

Ballistic transport; InSb quantum wells; Molecular beam epitaxy

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTRONS; HALL EFFECT; MAGNETIC FIELD EFFECTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; TRANSISTORS; WAVE INTERFERENCE;

BALLISTIC TRANSPORT; BAND RESISTANCE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0347129558 PISSN: 13869477 EISSN: None Source Type: Journal
DOI: 10.1016/j.physe.2003.08.012 Document Type: Conference Paper

Times cited : (17)

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