GaAs/AlGaAs p-type multiple-quantum wells for infrared detection at normal incidence: Model and experiment

Opto-Electronics Review

Volumn 9, Issue 2, 2001, Pages 164-172

  Szmulowicz, F ^a   Brown, G J ^a   Liu, H C ^b   Shen, A ^b   Wasilewski, Z R ^b   Buchanan, M ^b  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

Band gap engineering; GaAs AlGaAs; Infrared detector; p type

Indexed keywords

EID: 0346977856     PISSN: 12303402     EISSN: 18963757     Source Type: Journal    
DOI: None     Document Type: Article

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