Progress on optimization of p-type GaAs/AlGaAs quantum well infrared photodetectors

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 2, 2000, Pages 601-604

  Shen, A ^a   Liu, H C ^a   Buchanan, M ^a   Gao, M ^a   Szmulowicz, F ^b   Brown, G J ^b   Ehret, J ^b  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; FERMI LEVEL; MOLECULAR BEAM EPITAXY; OPTIMIZATION; PHOTOCURRENTS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE; X RAY DIFFRACTION ANALYSIS;

ALUMINUM GALLIUM ARSENIDE; BARRIER THICKNESS; DARK CURRENT; QUANTUM WELL INFRARED PHOTODETECTORS; WELL DOPING DENSITY;

INFRARED DETECTORS;

EID: 0034155684     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582234     Document Type: Article

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