A study of GaAs/AlGaAs p-type quantum well infrared photodetectors with different barrier heights

Journal of Applied Physics

Volumn 83, Issue 1, 1998, Pages 585-587

  Liu, H C ^a   Li, L ^a   Buchanan, M ^a   Wasilewski, Z R ^a   Brown, G J ^b   Szmulowicz, F ^b   Hegde, S M ^b  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; POLARIZATION; RESONANCE; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

BARRIER HEIGHTS; MULTIBAND ENVELOPE FUNCTION MODEL;

PHOTODETECTORS;

EID: 0031646468     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366644     Document Type: Article

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