Nitridation of epitaxially grown 6.1 Å semiconductors studied by X-ray photoelectron spectroscopy

Applied Surface Science

Volumn 222, Issue 1-4, 2004, Pages 6-12

  Preisler, E J ^a   Strittmatter, R P ^a   McGill, T C ^a   Hill, C J ^b  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Epitaxial surfaces; Semiconductors; X ray photoelectron spectroscopy

Indexed keywords

BINDING ENERGY; CHEMICAL BONDS; ELECTRON MULTIPLIERS; MOLECULAR BEAM EPITAXY; MOLECULAR ORIENTATION; NITRIDES; PLASMA SOURCES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING ANTIMONY; STOICHIOMETRY; SURFACE CHEMISTRY; THICKNESS MEASUREMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICAL SHIFT; SURFACE RECONSTRUCTION;

SEMICONDUCTOR GROWTH;

EID: 0346753491     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2003.08.017     Document Type: Article

References (30)

1. Xie H., Piao J., Katz J., Wang W.I., J. Appl. Phys. 70:1991;3152.
2. Hasenberg T.C., Chow D.H., Kost A.R., Miles R.H., West L., Electron. Lett. 31:1995;275.
3. Segawa K., Miki H., Otsubo M., Shirahata K., Fujibayashi K., Jpn. J. Appl. Phys. 16:1977;103.
4. Brown E.R., Soderstrom J.R., Parker C.D., Mahoney L.J., Molvar K.M., Mcgill T.C., Appl. Phys. Lett. 58:1991;2291.
5. Chiu T.H., Tsang W.T., J. Appl. Phys. 57:1985;4572.
6. Yu E.T., Mccaldin J.O., Mcgill T.C., Solid State Phys.: Adv. Res. Appl. 46:1992;1.
7. Dutta P.S., Bhat H.L., Kumar V., J. Appl. Phys. 81:1997;5821.
8. Perotin M., Coudray P., Etcheberry A., Gouskov L., Debiemmechouvy C., Luquet H., Mater. Sci. Eng. B. 28:1994;374.
9. Lin R.M., Tang S.F., Lee S.C., Kuan C.H., J. Cryst. Growth. 227:2001;167.
10. Dutta P.S., Rao K., Bhat H.L., J. Appl. Phys. 77:1995;4825.
11. Dutta P.S., Sangunni K.S., Bhat H.L., Kumar V., Phys. Rev. B. 51:1995;2153.
12. Dutta P.S., Sangunni K.S., Bhat H.L., Kumar V., Appl. Phys. Lett. 65:1994;1695.
13. Kodama M., Solid State Electron. 37:1994;1567.
14. Wu B.H., Xia G.Q., Li Z.H., Zhou J., Appl. Phys. Lett. 80:2002;1303.
15. Kikuchi A., Hoshi H., Kishino K., Jpn. J. Appl. Phys. 1(33):1994;688.
16. Anantathanasarn S., Ootomo S., Hashizume T., Hasegawa H., Appl. Surf. Sci. 159:2000;456.
17. Losurdo M., Capezzuto P., Bruno G., Perna G., Capozzi V., Appl. Phys. Lett. 81:2002;16.
18. J.F. Moulder, W.F. Stickle, P.E. Sobol, K.D. Bomben, Handbook of X-ray Photoelectron Spectroscopy, Perkin-Elmer, Physical Electronics Division, Eden Prarie, MN, 1992.
19. Seah M.P., Surf. Sci. 420:1999;28.
20. Seah M.P., Gilmore I.S., Spencer S.J., Surf. Sci. 461:2000;1.
21. Reilman R.F., Msezane A., Manson S.T., J. Electron. Spectrosc. Relat. Phenom. 8:1976;389.
22. MultiPak Ver. 2.2 Operator's Manual, Eden Prarie, MN, 1996.
23. Gergely G., Menyhard M., Gurban S., Benedek Z., Daroczi C., Rakovics V., Toth J., Varga D., Krawczyk M., Jablonski A., Surf. Interface Anal. 30:2000;195.
24. Gergely G., Sulyok A., Menyhard M., Toth J., Varga D., Jablonski A., Krawczyk M., Gruzza B., Bideux L., Robert C., Appl. Surf. Sci. 145:1999;173.
25. Tanuma S., Powell C., Penn D., Surf. Sci. 192:1987;L849.
26. Hecht J.D., Frost F., Chasse T., Hirsch D., Neumann H., Schindler A., Bigl F., Appl. Surf. Sci. 179:2001;196.
27. Hill P., Lu J., Haworth L., Westwood D.I., Macdonald J.E., Appl. Surf. Sci. 123:1998;126.
28. Delouise L.A., J. Vac. Sci. Technol. A. 10:1992;1637.
29. R.A. Beach, E.C. Piquette, T.C. McGill, MRS Internet J. Nitride Semicond. Res. 4S (1999).
30. Haworth L., Lu J., Hill P., Westwood D.I., Macdonald J.E., Hartmann N., Schneider A., Zahn D., J. Vac. Sci. Technol. B. 16:1998;2254.