Experimental determination of the inelastic mean free path of electrons in GaSb and InSb

Applied Surface Science

Volumn 144-145, Issue , 1999, Pages 173-177

  Gergely, G ^a   Sulyok, A ^a   Menyhard, M ^a   Toth, J ^b   Varga, D ^b   Jablonski, A ^c   Krawczyk, M ^c   Gruzza, B ^d   Bideux, L ^d   Robert, C ^d  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b INSTITUTE OF NUCLEAR RESEARCH ATOMKI   (Hungary)

^c INSTITUTE OF PHYSICAL CHEMISTRY   (Poland)

^d UNIVERSITÉ BLAISE PASCAL   (France)

Author keywords

Elastic scattering; Inelastic mean free path

Indexed keywords

ALGORITHMS; AUGER ELECTRON SPECTROSCOPY; CLEANING; COMPOSITION; ELECTRON ENERGY LEVELS; ION BOMBARDMENT; MONTE CARLO METHODS; PROBABILITY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SURFACE PHENOMENA; X RAY PHOTOELECTRON SPECTROSCOPY;

ELASTIC SCATTERING; GALLIUM ANTIMONIDE; INDIUM ANTIMONIDE; INELASTIC MEAN FREE PATH; PLASMON LOSSES;

ELECTRON SCATTERING;

EID: 0032626826     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00793-4     Document Type: Article

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