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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 136-138, Issue , 1998, Pages 756-762

Identification of deep bandgap states in 4H- and 6H-SiC by radio-tracer DLTS and PAC-spectroscopy

(5) Achtziger, N a Forkel Wirth, D b Grillenberger, J a Licht, T a Witthuhn, W a

a FRIEDRICH SCHILLER UNIVERSITY JENA (Germany)

b CERN (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL IMPURITIES; CRYSTAL LATTICES; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC FIELDS; ENERGY GAP; ION IMPLANTATION; RADIOACTIVE TRACERS; SEMICONDUCTOR DOPING; SILICON CARBIDE;

PERTURBED ANGULAR CORRELATION (PAC) SPECTROSCOPY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032017604 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(97)00767-2 Document Type: Article

Times cited : (6)

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