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Volumn 389-393, Issue , 2002, Pages 843-846
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Direct observation of the solid-phase recrystallization of self-implanted amorphous SiC layer on (11-20), (1-100), and (0001) oriented 6H-SiC
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Author keywords
Amorphous sic; Ion implantation; Solid phase recrystallization; Time resolved optical reflectivity measurements
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Indexed keywords
ACTIVATION ENERGY;
ION IMPLANTATION;
REFLECTION;
SILICON CARBIDE;
SUBSTRATES;
AMORPHOUS MATERIALS;
ANNEALING;
CRYSTALLINE MATERIALS;
CRYSTALLIZATION;
THERMAL EFFECTS;
AMORPHOUS SIC;
CRYSTALLINE SUBSTRATES;
DIFFERENT SUBSTRATES;
DIRECT OBSERVATIONS;
ORIENTATION DEPENDENCE;
RECRYSTALLIZED LAYER;
SOLID-PHASE;
TIME-RESOLVED OPTICAL REFLECTIVITIES;
SOLID-PHASE RECRYSTALLIZATION;
RECRYSTALLIZATION (METALLURGY);
SILICON CARBIDE;
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EID: 0036433967
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.389-393.843 Document Type: Conference Paper |
Times cited : (2)
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References (4)
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