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Volumn 389-393, Issue , 2002, Pages 843-846

Direct observation of the solid-phase recrystallization of self-implanted amorphous SiC layer on (11-20), (1-100), and (0001) oriented 6H-SiC

Author keywords

Amorphous sic; Ion implantation; Solid phase recrystallization; Time resolved optical reflectivity measurements

Indexed keywords

ACTIVATION ENERGY; ION IMPLANTATION; REFLECTION; SILICON CARBIDE; SUBSTRATES; AMORPHOUS MATERIALS; ANNEALING; CRYSTALLINE MATERIALS; CRYSTALLIZATION; THERMAL EFFECTS;

EID: 0036433967     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.843     Document Type: Conference Paper
Times cited : (2)

References (4)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.