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Pramana - Journal of Physics

Volumn 58, Issue 2, 2002, Pages 343-359

Flicker noise in degenerately doped Si single crystals near the metal-insulator transition

(3) Raychaudhuri, A K a Ghosh, Arindam b Swastik, K A R a

a INDIAN INSTITUTE OF SCIENCE (India)

b UNIVERSITY OF CAMBRIDGE (United Kingdom)

Author keywords

1 f noise; Doped Si; MI transition

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CONDUCTANCE; METAL INSULATOR TRANSITION; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

UNIVERSAL CONDUCTANCE FLUCTUATIONS (UCF);

SINGLE CRYSTALS;

EID: 0036465306 PISSN: 03044289 EISSN: None Source Type: Journal
DOI: 10.1007/s12043-002-0019-8 Document Type: Article

Times cited : (9)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.