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Journal of Physics D: Applied Physics

Volumn 34, Issue 21, 2001, Pages 3197-3202

Temperature and frequency dependence of flicker noise in degenerately doped Si single crystals

(2) Kar, S a Raychaudhuri, A K a

a INDIAN INSTITUTE OF SCIENCE (India)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DOPING (ADDITIVES); ELECTRIC CONDUCTANCE; ELECTRON ENERGY LEVELS; PHASE TRANSITIONS; SINGLE CRYSTALS; SPURIOUS SIGNAL NOISE; TEMPERATURE;

FLICKER NOISE; HOOGE PARAMETER; INSULATOR-METAL TRANSITION; RECOMBINATION-GENERATION TYPE MECHANISMS;

SILICON;

EID: 0035824092 PISSN: 00223727 EISSN: None Source Type: Journal
DOI: 10.1088/0022-3727/34/21/313 Document Type: Article

Times cited : (9)

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