InAs Quantum Dots Capped by GaAs, In 0.4Ga 0.6As Dots, and In 0.2Ga 0.8As Well

Journal of Nanoscience and Nanotechnology

Volumn 2, Issue 3-4, 2002, Pages 421-426

  Fu, Y ^a   Wang, S M ^b   Ferdos, F ^b   Sadeghi, M ^b   Larsson, A ^b  

^a UNIVERSITY OF GOTHENBURG   (Sweden)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Energy Band Structure; InAs Quantum Dot; Local Density of States; Optical Transition; Photoluminescence; Strain

Indexed keywords

GALLIUM; GALLIUM ARSENIDE; INDIUM; ORGANOARSENIC DERIVATIVE;

ARTICLE; ATOMIC FORCE MICROSCOPY; CHEMICAL STRUCTURE; CHEMISTRY; COMPARATIVE STUDY; COMPUTER SIMULATION; CONFORMATION; CRYSTALLIZATION; ENERGY TRANSFER; EVALUATION; INSTRUMENTATION; LUMINESCENCE; METHODOLOGY; NANOTECHNOLOGY; RADIATION EXPOSURE; SYNTHESIS; VALIDATION STUDY;

ARSENICALS; COMPUTER SIMULATION; CRYSTALLIZATION; ENERGY TRANSFER; GALLIUM; INDIUM; LUMINESCENCE; MICROSCOPY, ATOMIC FORCE; MODELS, MOLECULAR; MOLECULAR CONFORMATION; NANOTECHNOLOGY;

EID: 0346364437     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2002.103     Document Type: Article

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