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Volumn 20, Issue 3, 2002, Pages 1154-1157

Optical characterization of strained InGaAsN/GaAs multiple quantum wells

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; FOURIER TRANSFORMS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; REFLECTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; SPECTROMETERS; X RAY DIFFRACTION ANALYSIS;

EID: 0035998556     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1481752     Document Type: Conference Paper
Times cited : (9)

References (17)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.