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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 3, 2002, Pages 1154-1157

Optical characterization of strained InGaAsN/GaAs multiple quantum wells

(3) Heroux J B a Yang, X a Wang, W I a

a Department of Earth and Environmental Sciences (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; FOURIER TRANSFORMS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; REFLECTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; SPECTROMETERS; X RAY DIFFRACTION ANALYSIS;

OPTICAL CHARACTERIZATION;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0035998556 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1481752 Document Type: Conference Paper

Times cited : (9)

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