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Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 617-623

Effect of interface roughness on performance of AlGaAs/InGaAs/GaAs resonant tunneling diodes

(6) Li, Jiang a Mirabedini, A b Mawst, L J b Savage, D E b Matyi, R J b Kuech, T F a

a UNIVERSITY OF WISCONSIN MADISON (United States)

b University of Wisconsin Madison (United States)

Author keywords

I V characteristics; Interface roughness; Resonant tunneling diodes

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; SURFACE ROUGHNESS;

ALUMINUM GALLIUM ARSENIDE; RESONANT TUNNELING DIODES;

SEMICONDUCTOR DIODES;

EID: 0346312080 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00581-8 Document Type: Article

Times cited : (9)

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