Interface structures of InGaAs/InGaAsP/InGaP quantum well laser diodes grown by metalorganic chemical vapor deposition on GaAs substrates

Applied Physics Letters

Volumn 68, Issue 16, 1996, Pages 2240-2242

  Bhattacharya, A ^a   Mawst, L J ^a   Nayak, S ^a   Li, J ^a   Kuech, T F ^a  

^a University of Wisconsin Madison   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SURFACE STRUCTURE; TRANSMISSION ELECTRON MICROSCOPY;

INDIUM GALLIUM ARSENIC PHOSPHIDE; INDIUM GALLIUM ARSENIDE; LINE SHAPE; LINEWIDTH; LUMINESCENCE INTENSITY; SUBSTRATE MISORIENTATION;

QUANTUM WELL LASERS;

EID: 0030128278     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115871     Document Type: Article

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