Using Monte Carlo Simulation for Accurate Critical Dimension Metrology of Super Small Isolated Poly-Lines

Scanning

Volumn 25, Issue 6, 2003, Pages 291-296

  Karabekov, Albert ^a   Zoran, Oren ^a   Rosenberg, Zvika ^a   Eytan, Guy ^a  

^a Applied Materials Inc Israel   (Israel)

Author keywords

CD measurement accuracy; CD scanning electron microscopy; Critical dimension (CD) bias; Monte Carlo simulation

Indexed keywords

ALGORITHMS; COMPUTER SIMULATION; MEASUREMENTS; MONTE CARLO METHODS; SILICON;

CRITICAL DIMENSIONS (CD);

SCANNING ELECTRON MICROSCOPY;

ALGORITHM; ARTICLE; ELECTRON MICROSCOPY; MEASUREMENT; MODEL; MONTE CARLO METHOD; PRIORITY JOURNAL; SCANNING ELECTRON MICROSCOPY;

EID: 0346150345     PISSN: 01610457     EISSN: None     Source Type: Journal    
DOI: 10.1002/sca.4950250604     Document Type: Article

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