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Applied Physics Letters

Volumn 83, Issue 20, 2003, Pages 4149-4151

Structural and optical properties of strain-compensated GaAsSb/GaAs quantum wells with high Sb composition

(4) Zheng, X H a Jiang, D S b Johnson, S c Zhang, Y H c

a INSTITUTE OF PHYSICS (China)

b INSTITUTE OF SEMICONDUCTORS (China)

c Arizona State University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; COMPOSITION EFFECTS; CRYSTAL STRUCTURE; ELECTRON ENERGY LEVELS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; STRAIN; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

GALLIUM ARSENIC ANTIMONIDE; RECIPROCAL SPACE MAPPING; STRAIN COMPENSATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0346150167 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1628395 Document Type: Article

Times cited : (11)

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