GaAs-substrate-based long-wave active materials with type-II band alignments

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 4, 2001, Pages 1501-1504

  Johnson, S R ^a   Chaparro, S ^a   Wang, J ^a   Samal, N ^a   Cao, Y ^a   Chen, Z B ^a   Navarro, C ^a   Xu, J ^a   Yu, S Q ^a   Smith, David J ^b   Guo, C Z ^a   Dowd, P ^a   Braun, W ^a   Zhang, Y H ^a  

^a Arizona State University   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPOSITION EFFECTS; HETEROJUNCTIONS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; THICKNESS MEASUREMENT;

GALLIUM ARSENIDE ANTIMONIDE; GALLIUM ARSENIDE PHOSPHIDE; LINEWIDTH BROADENING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035535318     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1386380     Document Type: Conference Paper

References (6)

1. W. Braun, P. Dowd, C.-Z. Guo, S. L. Chen, C. M. Ryu, U. Koelle, S. R. Johnson, Y.-H. Zhang, J. W. Tomm, T. Elsasser, and D. J. Smith, J. Appl. Phys. 88, 3004 (2000).
2. J. R. Meyer, C. A. Hoffman, F. J. Bartoli, and L. R. Ram-Mohan, Appl. Phys. Lett. 67, 757 (1996).
3. M. Yamada, T. Anan, K. Tokutone, A. Kamei, K. Nishi, and S. Sugbu, IEEE Photonics Technol. Lett. 12, 774 (2000).
4. O. Blum and J. F. Klem, IEEE Photonics Technol. Lett. 12, 771 (2000).
5. C. G. Van de Walle, Phys. Rev. B 39, 1871 (1989).
6. B. V. Shanabrook, J. R. Waterman, J. L. Davis, and R. J. Wagner, Appl. Phys. Lett. 61, 2338 (1992).