Determination of the interdiffusion coefficient for Si/Al multilayers by Auger electron spectroscopical sputter depth profiling

Thin Solid Films

Volumn 433, Issue 1-2 SPEC., 2003, Pages 92-96

  Wang, J Y ^a   Zalar, A ^b   Zhao, Y H ^a   Mittemeijer, E J ^a  

^a MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

^b Institute of Surface Engineering and Optoelectronics Ljubljana   (Slovenia)

Author keywords

AES depth profiling; Interdiffusion; MRI model; Si Al multilayer

Indexed keywords

ALUMINUM; AUGER ELECTRON SPECTROSCOPY; INTERDIFFUSION (SOLIDS); SILICON;

DEPTH PROFILING;

MULTILAYERS;

EID: 0038277236     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)00284-0     Document Type: Conference Paper

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