AES depth profiling of thermally treated Al/Si thin-film structures

Vacuum

Volumn 71, Issue 1-2 SPEC., 2003, Pages 11-17

  Zalar, A ^a   Wang, J Y ^b   Zhao, Y H ^b   Mittemeijer, E J ^b   Panjan, P ^c  

^a Institute of Surface Engineering and Optoelectronics Ljubljana   (Slovenia)

^b MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

^c JO EF STEFAN INSTITUTE   (Slovenia)

Author keywords

AES; Al Si multilayer structures; Depth profiling; Diffusion; Solid state reactions

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; DIFFUSION; HEAT TREATMENT; ISOTHERMS; SOLID SOLUTIONS; SUBSTRATES; THIN FILMS;

SOLID-STATE REACTIONS;

MULTILAYERS;

EID: 0037427422     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(02)00707-8     Document Type: Conference Paper

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