Induced lattice defects in InGaAs photodiodes by high-temperature electron irradiation

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 337-340

  Ohyama, H ^a   Kobayashi, K ^b   Vanhellemont, J ^c   Simoen, E ^d   Claeys, C ^d,e   Takakura, K ^a   Hirao, T ^f   Onoda, S ^g  

^a KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b NEC IC Microcomputer Systems Ltd   (Japan)

^c GHENT UNIVERSITY   (Belgium)

^d IMEC   (Belgium)

^e UNIVERSITY OF LEUVEN   (Belgium)

^f JAPAN ATOMIC ENERGY AGENCY   (Japan)

^g TOKAI UNIVERSITY   (Japan)

Author keywords

2 MeV electron; High temperature irradiation; InGaAs photodiode; Radiation damage

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEGRADATION; DIFFUSION; DOSIMETRY; ELECTRON IRRADIATION; IRRADIATION; MOSFET DEVICES; PHOTOCURRENTS; RADIATION DAMAGE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; VAPOR PHASE EPITAXY;

ELECTRON CAPTURE; HIGH-TEMPERATURE IRRADIATION;

PHOTODIODES;

EID: 0345873478     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.080     Document Type: Conference Paper

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