Trapping of mobile Mu centers in single crystal AlN

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 430-433

  Lichti, R L ^a   Celebi, Y G ^b   Chow, K H ^c   Hitti, B ^d   Cox, S F J ^e,f  

^a TEXAS TECH UNIVERSITY   (United States)

^b ISTANBUL UNIVERSITY   (Turkey)

^c UNIVERSITY OF ALBERTA   (Canada)

^d TRIUMF   (Canada)

^e RUTHERFORD APPLETON LABORATORY   (United Kingdom)

^f UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

AlN; Defect diffusion; Hydrogen; Muonium

Indexed keywords

CRYSTAL DEFECTS; DISSOCIATION; ELECTRON TRANSITIONS; GROUND STATE; HIGH TEMPERATURE EFFECTS; ISOTOPES; PASSIVATION; POSITIVE IONS; RESONANCE; SINGLE CRYSTALS; SPECTROMETERS; SPECTROSCOPIC ANALYSIS; THICK FILMS;

DEFECT DIFFUSION; SPIN DEPOLARIZATION;

ALUMINUM NITRIDE;

EID: 0345873471     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.034     Document Type: Conference Paper

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