Positively charged muonium centers in aluminum and gallium nitrides

Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 73-76

  Lichti, R L ^a   Cox, S F J ^b,c   Davis, E A ^d   Hitti, B ^e   Sjue, S K L ^a  

^a TEXAS TECH UNIVERSITY   (United States)

^b RUTHERFORD APPLETON LABORATORY   (United Kingdom)

^c UNIVERSITY COLLEGE LONDON   (United Kingdom)

^d UNIVERSITY OF LEICESTER   (United Kingdom)

^e TRIUMF   (Canada)

Author keywords

AlN; Defect mobility; GaN; Hydrogen; Muonium

Indexed keywords

DEFECTS; ELECTRIC CHARGE; GALLIUM NITRIDE; RESONANCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; THERMAL EFFECTS;

MUONIUM DEFECT CENTERS;

ALUMINUM NITRIDE;

EID: 0035678803     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00657-3     Document Type: Article

References (9)