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Volumn 326, Issue 1-4, 2003, Pages 139-144
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Properties of muonium defect centers in the III-V nitrides
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Author keywords
Hydrogen; III V nitrides; Impurity diffusion; Muonium
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Indexed keywords
CHEMICAL BONDS;
CRYSTAL DEFECTS;
ELECTRIC CHARGE;
ELECTRONIC STRUCTURE;
HYDROGEN;
AMPHOTERIC COMPENSATING IMPURITY;
SEMICONDUCTOR MATERIALS;
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EID: 0037307406
PISSN: 09214526
EISSN: None
Source Type: Journal
DOI: 10.1016/S0921-4526(02)01611-3 Document Type: Article |
Times cited : (11)
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References (15)
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