Defect formation in Si(111)7×7 surfaces due to 200 eV Ar+ ion bombardment

Physical Review B - Condensed Matter and Materials Physics

Volumn 68, Issue 16, 2003, Pages

  Ghose, K ^a   Robinson, K ^a   Averback, S ^b  

^a University of Illinois at Urbana Champaign   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; SILICON;

ARTICLE; ATOMIC PARTICLE; CRYSTAL STRUCTURE; ENERGY; ION TRANSPORT; MOLECULAR INTERACTION; SURFACE PROPERTY; X RAY DIFFRACTION;

EID: 0345600805     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.68.165342     Document Type: Article

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