Physical/electromagnetic pHEMT modeling

IEEE Transactions on Microwave Theory and Techniques

Volumn 51, Issue 3, 2003, Pages 830-838

  Cidronali, Alessandro ^a   Leuzzi, Giorgio ^b   Manes, Gianfranco ^a   Giannini, Franco ^c  

^a UNIVERSITY OF FLORENCE   (Italy)

^b UNIVERSITY OF L'AQUILA   (Italy)

^c UNIVERSITY OF ROME TOR VERGATA   (Italy)

Author keywords

Electron device modeling; Global modeling; Microwave monolithic integrated circuit; Pseudomorphic high electron mobility transistors (pHEMT)

Indexed keywords

ELECTROMAGNETIC FIELDS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; OPTIMIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SPURIOUS SIGNAL NOISE; TIME DOMAIN ANALYSIS;

HYDRODYNAMIC TRANSPORT MODEL; SIGNAL DISTRIBUTION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0345382617     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2003.808580     Document Type: Article

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