Investigation into intermodulation distortion in HEMTs using a quasi-2-D physical model

IEEE Transactions on Microwave Theory and Techniques

Volumn 49, Issue 12, 2001, Pages 2315-2321

  Rudge, Peter J ^b   Miles, Robert E ^b   Steer, Michael B ^a,c   Snowden, Christopher M ^a,b  

^a IEEE

^b UNIVERSITY OF LEEDS   (United Kingdom)

^c North Carolina State University   (United States)

Author keywords

Intermodulation distortion; Linearity; Microwave power FET amplifiers; MODFET power amplifiers; MODFETs; Semiconductor device modeling

Indexed keywords

INTERMODULATION DISTORTION;

HIGH ELECTRON MOBILITY TRANSISTORS; MICROWAVE DEVICES; POWER AMPLIFIERS; SEMICONDUCTOR DEVICE MODELS; SIGNAL DISTORTION;

INTERMODULATION;

EID: 0035686715     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.971615     Document Type: Conference Paper

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