HEMT physical model for MMMIC CAD

1995 25th European Microwave Conference

Volumn 1, Issue , 1995, Pages 199-204

  Morton, C G ^a   Snowden, C M ^a   Howes, M J ^a  

^a UNIVERSITY OF LEEDS   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EQUIVALENT CIRCUITS; MILLIMETER WAVES; SCATTERING PARAMETERS;

BIAS CONDITIONS; BIAS DEPENDENCE; CAD APPLICATIONS; CONSERVATION OF CHARGE; MILLIMETRE WAVES; PHYSICAL MODEL; PINCHOFF; SPURIOUS RESPONSE;

COMPUTER AIDED DESIGN;

EID: 0001087421     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EUMA.1995.336946     Document Type: Conference Paper

References (10)

1. P. H. Ladbrooke. MMIC Design: GaAs FETs and HEMTs. Artech House, 1989.
2. M.D. Meehan and J. Purviance. Yield and Reliability in Microwave Circuit and System Design. Artech House, 1993.
3. C. M. Snowden and R. R. Pantoja. Quasi-two-dimensional MESFET simulations for CAD. IEEE Trans. Elec. Dev., 36(9): 1564-1574, September 1989.
4. M. S. Shur and L. F. Eastman. I-V characteristics of GaAs MESFET with nonuniform doping profile. IEEE Trans. Elec. Dev., 27:455-461, February 1980.
5. C.G. Morton. The epitaxial layer design of HEMTs. D.Phil Thesis, November 1994.
6. P. A. Sandbom, A. Rao, and P. A. Blakey. An assessment of approximate nonstationary charge transport models used for GaAs device modeling. IEEE Trans. Elec. Dev., 36(7):1244-1253, July 1989.
7. C.M. Snowden and D. Loret. Two-dimensional hot-electron models for short-gate-length GaAs MESFETs. IEEE Trans. Elec. Dev., ED-34(2):212-223, February 1987.
8. R. Drury and C.M. Snowden. Fast and accurate HFET modelling for microwave cad applications. Proceedings of the Third International Workshop on Computational Electronics, May 1994.
9. T. Shawki. G. Salmer, and OEI-Sayed. MODFET 2-D hydrodynamic energy modeling: Optimization of subquarter micron-gate structures. IEEE Irans. Elec. Dev., ED-37(1):21-30, January 1990.
10. C. G. Morton, C. M. Snowden, and M. J. Howes. A new quasi-two dimensional hemt model. Proceedings of the 6th International Conference on Simulation of Semiconductor Devices and Processes, September 1995.