Numerical model of a 0.2 μm AlGaAs/GaAs HEMT including electromagnetic effects

Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

Volumn , Issue , 1997, Pages 635-638

  Cidronali, A ^a   Leuzzi, G ^b   Collodi, G ^a   Manes, G ^a  

^a UNIVERSITY OF FLORENCE   (Italy)

^b UNIVERSITY OF ROME TOR VERGATA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM ARSENIDE; BOLTZMANN EQUATION; ELECTRONS; GALLIUM COMPOUNDS; MAXWELL EQUATIONS; TIME DOMAIN ANALYSIS;

BOLTZMANN TRANSPORT EQUATION; ELECTRON DEVICE MODELS; HIGH FREQUENCY HF; NONSTATIONARY; NUMERICAL RESULTS; PHYSICS-BASED MODELING; THREEDIMENSIONAL (3-D); TIME DOMAIN SOLUTION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34250157578     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCS.1998.711757     Document Type: Conference Paper

References (5)

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2. G. Avitabile, A. Cidronali, G. Varmini, G. Manes, "Multifmger effect in GaAs FET distributed large signal CAD model, " 1996IEEE International Electron Devices Meeting, San Francisco, U, S. A, December 8-11, 1996.
3. P. A. Sandborn, A. Rao, P. A. Blakey; "An assassment of approximate non stationary charge transport models used for GaAs Device Modeling, " IEEE Trans. Electron Devices, Vol. 36, no. 7, My 1989, pp. 1244-1253.
4. B. Carnez, A. Cappy, A. Kaszynski, E. Constant, G. Salmer;"Modeling of a submirometer gate field-effect transistors including effects of nonstationary electron dynamics, " J. Appl. Phys. Vol. 51, January 1980, pp. 784-790.
5. A. Shey, W. H. Ku; "An analytical current-voltage characteristics model for high electron mobility transistor based on nonlinear charge control formulation, " IEEE Trans. Electron Devices, Vol, 36, no. 10, October 1989, pp. 2299-2305.