Charging effects on the carrier mobility in silicon-on-insulator wafers covered with a high-k layer

Journal of Applied Physics

Volumn 94, Issue 10, 2003, Pages 6607-6610

  Halley, D ^a   Norga, G ^a   Guiller, A ^a   Fompeyrine, J ^a   Locquet, J P ^a   Drechsler, U ^a   Siegwart, H ^a   Rossel, C ^a  

^a IBM RESEARCH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MOBILITY; HALL EFFECT; MOLECULAR BEAM EPITAXY; MOSFET DEVICES; PERMITTIVITY; POLYCRYSTALLINE MATERIALS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; THIN FILMS; THRESHOLD VOLTAGE;

INVERSION CHANNELS;

SILICON WAFERS;

EID: 0345377605     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1621721     Document Type: Article

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