Effect of a GaN nucleation layer on GaN film properties grown by metalorganic chemical vapor deposition

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 231-236

  van der Stricht, W ^a   Moerman, I ^a   Demeester, P ^a   Crawley, J A ^a   Thrush, E J ^a   Middleton, P G ^a   Cowan, C Trager ^a   O'Donnell, K P ^a  

^a GHENT UNIVERSITY   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CHARACTERIZATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; NITRIDES; NUCLEATION; OPTICAL PROPERTIES; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACES; X RAY DIFFRACTION;

EPILAYER; FILM QUALITY; GALLIUM NITRIDE; OPTICAL CHARACTERISATION; TRIMETHYLGALLIUM; VERTICAL ROTATING DISK REACTOR;

FILM GROWTH;

EID: 0029771075     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)