Alternative substrates for gallium nitride epitaxy: Photoluminescence and morphological investigations

Materials Science and Engineering B

Volumn 43, Issue 1-3, 1997, Pages 154-156

  Middleton, P G ^a   Trager Cowan, C ^a   O'Donnell, K P ^a   Cheng, T S ^b   Hooper, S E ^b   Foxon, C T ^b  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

Molecular beam epitaxy; Photoluminescence; Substrates

Indexed keywords

ATOMIC FORCE MICROSCOPY; FILM GROWTH; FLUORESCENCE; LITHIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES;

GALLIUM NITRIDE; PHOTOLUMINESCENCE SPECTROSCOPY;

SEMICONDUCTING FILMS;

EID: 0000701953     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01853-3     Document Type: Article

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