Electrically active silver-hydrogen complexes in silicon

Materials Science Forum

Volumn 258-263, Issue PART 1, 1997, Pages 301-306

  Yarykin, N ^b   Sachse, J U ^a   Weber, J ^a   Lemke, H ^c  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

^c TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

DLTS; Hydrogen; Silicon; Silver

Indexed keywords

ANNEALING; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON ENERGY LEVELS; ETCHING; HYDROGEN BONDS; HYDROGENATION; INTERFACIAL ENERGY; SEMICONDUCTOR DOPING; SILVER;

WET CHEMICAL ETCHING;

SEMICONDUCTING SILICON;

EID: 3743079349     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.258-263.301     Document Type: Article

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