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Journal of Crystal Growth

Volumn 175-176, Issue PART 2, 1997, Pages 1144-1151

Photoluminescence study of Si/SiGe multiple quantum wells grown by MBE

(5) Grutzmacher D a Hartmann, R a Muller E a Gennser, U a Dommann, A b

a PAUL SCHERRER INSTITUTE (Switzerland)

b Neutechnikum Buchs (Switzerland)

Author keywords

Molecular beam epitaxy; Photoluminescence; Quantum well structures; SiGe alloys

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; EVAPORATION; FILM GROWTH; ION BOMBARDMENT; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES;

SILICON GERMANIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031140985 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(96)00992-X Document Type: Article

Times cited : (6)

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