Improvement of surface morphology and dielectric property of YMnO3 films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 9 B, 2003, Pages 6003-6006

  Sakata, Hironori ^a   Ito, Daisuke ^a   Yoshimura, Takeshi ^a   Ashida, Atsushi ^a   Fujimura, Norifumi ^a  

^a Osaka Prefecture University   (Japan)

Author keywords

C V characteristics; Ferroelectric gate transistor; Low temperature growth; MFIS structure; Pulsed laser deposition (PLD); Surface morphology; YMnO3

Indexed keywords

DENSITY (SPECIFIC GRAVITY); DIELECTRIC PROPERTIES; EVAPORATION; FERROELECTRICITY; FIELD EFFECT TRANSISTORS; MORPHOLOGY; PULSED LASER DEPOSITION; STOICHIOMETRY; SUBSTRATES; THERMAL EFFECTS;

CRYSTALLINITY; YTTRIUM MANGANATE;

FERROELECTRIC THIN FILMS;

EID: 0344741489     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.6003     Document Type: Article

References (11)

1. J. L. Moll and Y. Tarui: IEEE Trans. Electron Device ED-10 (1963) 338.
2. N. Fujimura, T. Ishida, T. Yoshimura and T. Ito: Appl. Phys. Lett. 69 (1996) 1011.
3. N. Fujimura, S. Azuma, N. Aoki, T. Yoshimura and T. Ito: J. Appl. Phys. 80 (1996) 7084.
4. H. Kitahata, K. Tadanaga, T. Minami, N. Fujimura and T. Ito: Appl. Phys. Lett. 75 (1999) 719.
5. D. Ito, N. Fujimura and T. Ito: Jpn. J. Appl. Phys. 39 (2000) 5525.
6. T. Yoshimura, N. Fujimura, D. Ito and T. Ito: J. Appl. Phys. 87 (2000) 3444.
7. N. Fujimura, D. Ito and T. Ito: Ferroelectrics 271 (2002) 229.
8. D. Ito, N. Fujimura and T. Ito: J. Appl. Phys. 93 (2003) 5563.
9. D. Ito, N. Fujimura and T. Ito: Ferroelectrics 271 (2002) 87.
10. D. Ito, N. Fujimura and T. Ito: to be published in J. Appl. Phys.
11. B. Fu and W. Huebner: J. Mater. Res. 9 (1996) 2645.