Retention property analysis of epitaxially grown YMnO3/Y 2O3/Si capacitor

Ferroelectrics

Volumn 271, Issue , 2002, Pages 87-92

  Ito, Daisuke ^a   Fujimura, Norifumi ^a   Kakuno, Kosuke ^a   Ito, Taichiro ^a  

^a Osaka Prefecture University   (Japan)

Author keywords

C V property; Epitaxial; MFIS; P E hysteresis; Pulse measurement; Retention property

Indexed keywords

EPITAXIAL GROWTH; FERROELECTRICITY; HYSTERESIS; POLARIZATION; SAPPHIRE; YTTRIUM COMPOUNDS;

C-V PROPERTY; EPITAXIAL; METAL/FERROELECTRIC/INSULATOR/SEMICONDUCTOR (MFIS); P-E HYSTERESIS; PULSE MEASUREMENT; RETENTION PROPERTY;

CAPACITORS;

EID: 0037966351     PISSN: 00150193     EISSN: 15635112     Source Type: Journal    
DOI: 10.1080/713716221     Document Type: Conference Paper

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