The progress of YMnO 3/Y 2O 3/Si system for a ferroelectric gate field effect transistor

Ferroelectrics

Volumn 271, Issue , 2002, Pages 229-234

  Fujimura, Norifumi ^a   Ito, Daisuke ^a   Ito, Taichro ^a  

^a Osaka Prefecture University   (Japan)

Author keywords

Ferroelectric gate; Field effect transistor; Material design; Y 2O 3; YMnO 3

Indexed keywords

FERROELECTRIC GATE; FIELD EFFECT TRANSISTOR; MATERIAL DESIGN;

CAPACITORS; ELECTRIC INSULATORS; FERROELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; SEMICONDUCTOR MATERIALS;

YTTRIUM COMPOUNDS;

EID: 0038764126     PISSN: 00150193     EISSN: 15635112     Source Type: Conference Proceeding    
DOI: 10.1080/00150190211525     Document Type: Conference Paper

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5. N. Fujimura et al. Symposia Proc. of Materials Research Society, 574 (1999) 237