Temperature acceleration of breakdown and quasi-breakdown phenomena in ultra-thin oxides

Microelectronics Reliability

Volumn 39, Issue 6-7, 1999, Pages 815-820

  Bruyere S ^a,b   Roy, D ^a   Vincent, E ^a   Ghibaudo, G ^b  

^a STMICROELECTRONICS   (France)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; MATHEMATICAL MODELS; SILICA; TEMPERATURE;

MOLECULAR DEFECT STATES; QUASI BREAKDOWN PROCESSES; ULTRATHIN GATE OXIDES;

ULTRATHIN FILMS;

EID: 0344641952     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(99)00106-7     Document Type: Article

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