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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 10, 1999, Pages 5715-5719

Silicon dioxide film with low dielectric constants using liquid-phase deposition

(3) Chanthamaly, Phonekeo a Arakawa, Taro a Haneji, Nobuo a

a YOKOHAMA NATIONAL UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL BONDS; DEPOSITION; DISSOCIATION; FLUORINE; PERMITTIVITY; SEMICONDUCTOR GROWTH; SILICA; SUBSTRATES; SURFACE ROUGHNESS; X RAY PHOTOELECTRON SPECTROSCOPY;

LIQUID-PHASE DEPOSITION;

SEMICONDUCTING FILMS;

EID: 0033353374 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.38.5715 Document Type: Article

Times cited : (10)

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