Formation of individual holes in amorphous SiO2 by swift heavy-ion bombardment followed by wet and dry etching

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 12 B, 2000, Pages 7058-7059

  Awazu, Koichi ^a   Ishii, Satoshi ^b   Shima, Kunihiro ^b  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Defects; Glass; Ion bombardment; Latent track; Reactive ion etching; Silica glass

Indexed keywords

ASPECT RATIO; DRY ETCHING; GLASS; HEAVY IONS; HOLE TRAPS; HYDROFLUORIC ACID; ION BOMBARDMENT; REACTIVE ION ETCHING; SILICA;

HEAVY-ION BOMBARDMENT; SELECTIVE ETCHING;

AMORPHOUS MATERIALS;

EID: 0034429101     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.7058     Document Type: Article

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