Low-Temperature Operation of Green, Blue and UV InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

Materials Research Society Symposium - Proceedings

Volumn 764, Issue , 2003, Pages 349-354

  Cao, X A ^a   LeBoeuf, S F ^a   Garrett, J L ^a   Ebong, A ^a   Rowland, L B ^a   Arthur, S D ^a  

^a GE GLOBAL RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; GALLIUM NITRIDE; GROWTH (MATERIALS); LIGHT EMITTING DIODES; LOW TEMPERATURE EFFECTS; MICROSTRUCTURE; SAPPHIRE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; ULTRAVIOLET RADIATION;

CARRIER CONFINEMENT; EPITAXIAL STRUCTURES; NONRADIATIVE RECOMBINATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0344065605     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-764-c5.5     Document Type: Conference Paper

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