New Junction Capacitance Methods for the Study of Defect Distributions and Carrier Properties in the Copper Indium Diselenide Alloys

Materials Research Society Symposium - Proceedings

Volumn 763, Issue , 2003, Pages 429-440

  Cohen, J D ^a   Heath, Jennifer T ^a,c   Shafarman, William N ^a,b  

^a UNIVERSITY OF OREGON   (United States)

^b UNIVERSITY OF DELAWARE   (United States)

^c LINFIELD COLLEGE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; GALLIUM ALLOYS; INTERFACES (MATERIALS); POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR JUNCTIONS; SPECTROSCOPIC ANALYSIS; THIN FILMS;

DEFECT DISTRIBUTIONS; METASTABLE CHANGES;

COPPER ALLOYS;

EID: 0344065167     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-763-b9.1     Document Type: Conference Paper

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