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Volumn 49, Issue 1-4, 1997, Pages 277-283
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Fabrication of graded band-gap Cu(InGa)Se2 thin-film mini-modules with a Zn(O,S,OH)x buffer layer
a a a a a a a a a |
Author keywords
Cu(InGa)Se2; Thin film mini modules; Zn(O,S,OH)x
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Indexed keywords
BAND STRUCTURE;
CRYSTAL GROWTH;
CRYSTAL MICROSTRUCTURE;
DEPOSITION;
ENERGY EFFICIENCY;
INTERFACES (MATERIALS);
PERFORMANCE;
SEMICONDUCTING SELENIUM COMPOUNDS;
SEMICONDUCTING ZINC COMPOUNDS;
SEMICONDUCTOR DEVICE MANUFACTURE;
SOLAR ABSORBERS;
BAND GAP STRUCTURE;
COPPER INDIUM GALLIUM SELENIDE;
LIGHT SOAKING;
SULFURIZATION;
THIN FILM MINI MODULES;
THIN FILM DEVICES;
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EID: 0031379762
PISSN: 09270248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0927-0248(97)00204-3 Document Type: Article |
Times cited : (71)
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References (10)
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