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Volumn 49, Issue 1-4, 1997, Pages 277-283

Fabrication of graded band-gap Cu(InGa)Se2 thin-film mini-modules with a Zn(O,S,OH)x buffer layer

Author keywords

Cu(InGa)Se2; Thin film mini modules; Zn(O,S,OH)x

Indexed keywords

BAND STRUCTURE; CRYSTAL GROWTH; CRYSTAL MICROSTRUCTURE; DEPOSITION; ENERGY EFFICIENCY; INTERFACES (MATERIALS); PERFORMANCE; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SOLAR ABSORBERS;

EID: 0031379762     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(97)00204-3     Document Type: Article
Times cited : (71)

References (10)
  • 4
    • 30244431715 scopus 로고    scopus 로고
    • private communication
    • R.R. Gay, private communication.
    • Gay, R.R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.