A fast X‐ray method to determine Ge content and relaxation of partly relaxed Si1–xGex layers on silicon substrates

physica status solidi (a)

Volumn 141, Issue 1, 1994, Pages 155-161

  Zaumseil, P ^a  

^a IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 85001703258     PISSN: 00318965     EISSN: 1521396X     Source Type: Journal    
DOI: 10.1002/pssa.2211410115     Document Type: Article

References (8)

1. In-situ X-ray measurements of relaxation processes in Si1-xGex layers on si substrate