AlGaN-based Bragg reflectors

MRS Internet Journal of Nitride Semiconductor Research

Volumn 2, Issue , 1997, Pages

  Ambacher, O ^a   Arzberger, M ^a   Brunner, D ^a   Angerer, H ^a   Freudenberg, F ^a   Esser, N ^b   Wethkamp, T ^b   Wilmers, K ^b   Richter, W ^b   Stutzmann, M ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ALUMINUM COMPOUNDS; ELLIPSOMETRY; GALLIUM NITRIDE; MIRRORS; MOLECULAR BEAM EPITAXY; REFRACTIVE INDEX; SEMICONDUCTING FILMS;

BRAGG REFLECTORS; PHOTOTHERMAL DEFLECTION; THRESHOLD CURRENT; VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

BRAGG CELLS;

EID: 0343993912     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300001484     Document Type: Article

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